EPC2030

EPC

GANFET NCH 40V 31A DIE

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EPC2030

EPC

GANFET NCH 40V 31A DIE

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DocumentsDatasheet

Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 7.28
		10	$ 6.24
		100	$ 5.20
	Digi-Reel®	1	$ 7.28
		10	$ 6.24
		100	$ 5.20
	Tape & Reel (TR)	500	$ 3.09

Description

General part information

EPC20 Series

N-Channel 40 V 31A (Ta) Surface Mount Die

Documents

Technical documentation and resources

Datasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	EPC2030	EPC20 Series

Current - Continuous Drain (Id) @ 25¯C	-	3 A
Current - Continuous Drain (Id) @ 25°C	31 A	1.7 - 500 A
Current - Continuous Drain (Id) @ 25░C	-	31 A
Drain to Source Voltage (Vdss)	40 V	15 - 350 V
Drive Voltage (Max Rds On, Min Rds On)	-	5 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC	0.12 - 18 nC
Gate Charge (Qg) (Max) @ Vgs	-	0.044 - 33 nC
Input Capacitance (Ciss) (Max) @ Vds	-	8.4 - 4523 pF
Input Capacitance (Ciss) (Max) @ Vds [Max]	1900 pF	115 - 3267 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	125 - 150 °C
Operating Temperature [Min]	-40 °C	-40 °C
Package / Case	Die	Die
Rds On (Max) @ Id, Vgs	2.4 mOhm	1.1 - 550 mOhm
Rds On (Max) @ Id, Vgs	-	1.5 - 45 mOhm
Supplier Device Package	Die	Die
Technology	GaNFET (Gallium Nitride)	GaNFET (Gallium Nitride)
Vgs (Max)	-	6 V
Vgs (Max)	-	-5 - -4 V
Vgs(th) (Max) @ Id	2.5 V	2.5 V
Vgs(th) (Max) @ Id	-	2.5 V

EPC20 Series

GANFET N-CH 200V 48A DIE

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max) [Max]	Vgs (Max) [Min]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
EPC EPC2034	48 A	8.8 nC	Surface Mount	200 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V	950 pF	150 °C	-40 °C	6 V	-4 V	N-Channel	10 mOhm	Die
EPC EPC2044	9.4 A		Surface Mount	100 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V		150 °C	-40 °C	6 V	-4 V	N-Channel		Die	664 pF	10.5 mOhm
EPC EPC2024	90 A		Surface Mount	40 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V	2100 pF	150 °C	-40 °C	6 V	-4 V	N-Channel		Die		1.5 mOhm
EPC EPC2052	8.2 A		Surface Mount	100 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V		150 °C	-40 °C	6 V	-4 V	N-Channel	13.5 mOhm	Die	575 pF		4.5 nC
EPC EPC2030	31 A		Surface Mount	40 V	Die	GaNFET (Gallium Nitride)	2.5 V		1900 pF	150 °C	-40 °C			N-Channel	2.4 mOhm	Die			18 nC
EPC EPC2016	11 A		Surface Mount	100 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V	520 pF	125 ¯C	-40 °C	6 V	-5 V	N-Channel		Die		16 mOhm	5.2 nC
EPC EPC2065	60 A		Surface Mount	80 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V		150 °C	-40 °C	6 V	-4 V	N-Channel	3.6 mOhm	Die			12.2 nC
EPC EPC2039		2.4 nC	Surface Mount	80 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V		150 °C	-40 °C	6 V	-4 V	N-Channel	25 mOhm	Die	210 pF
EPC EPC2023	60 A		Surface Mount	30 V	Die	GaNFET (Gallium Nitride)								N-Channel	1.3 mOhm	Die	2300 pF
EPC EPC2055	29 A	8.5 nC	Surface Mount	40 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V		150 °C	-40 °C	6 V	-4 V	N-Channel	3.6 mOhm	Die	1111 pF