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STP2NK90Z - TO-220-3

STP2NK90Z

Active
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 2.1 A, 900 V, 6.5 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsTN1225+15
STP2NK90Z - TO-220-3

STP2NK90Z

Active
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 2.1 A, 900 V, 6.5 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsTN1225+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP2NK90Z
Current - Continuous Drain (Id) @ 25°C2.1 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]27 nC
Input Capacitance (Ciss) (Max) @ Vds485 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)70 W
Rds On (Max) @ Id, Vgs6.5 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.29
10$ 1.48
100$ 1.02
500$ 0.82
1000$ 0.78
NewarkEach 1$ 2.03
10$ 1.73
100$ 1.34
500$ 1.15
1000$ 1.03
2500$ 0.85
10000$ 0.81

Description

General part information

STP2NK90Z Series

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.