STP2NK90Z Series

N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in a TO-220 package

Catalog

N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in a TO-220 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Supplier Device Package	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STP2NK90Z	10 V	TO-220-3	900 V	70 W	6.5 Ohm	485 pF	4.5 V	30 V	N-Channel	TO-220	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	27 nC	2.1 A

Catalog

N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in a TO-220 package

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.