IXFK44N55Q

Obsolete

IXYS

MOSFET N-CH 550V 44A TO264AA

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Obsolete

IXYS

MOSFET N-CH 550V 44A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK44N55Q

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Input Capacitance (Ciss) (Max) @ Vds	6400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
IXYS IXFK44N50	MOSFET (Metal Oxide)	TO-264-3 TO-264AA	270 nC	Through Hole	20 V	500 V	4 V	10 V	120 mOhm	-55 °C	150 °C	44 A	N-Channel	TO-264AA (IXFK)	8400 pF	500 W
IXYS IXFK44N55Q	MOSFET (Metal Oxide)	TO-264-3 TO-264AA		Through Hole	20 V	550 V	4.5 V	10 V	120 mOhm	-55 °C	150 °C	44 A	N-Channel	TO-264AA (IXFK)	6400 pF	500 W	190 nC
IXYS IXFK44N60	MOSFET (Metal Oxide)	TO-264-3 TO-264AA	330 nC	Through Hole	20 V	600 V	4.5 V	10 V	130 mOhm	-55 °C	150 °C	44 A	N-Channel	TO-264AA (IXFK)				560 W	8900 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 550 V 44A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

No documents available