MOSFET N-CH 500V 44A TO-264AA
| Part | Technology | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | MOSFET (Metal Oxide) | TO-264-3 TO-264AA | 270 nC | Through Hole | 20 V | 500 V | 4 V | 10 V | 120 mOhm | -55 °C | 150 °C | 44 A | N-Channel | TO-264AA (IXFK) | 8400 pF | 500 W | |||
IXYS | MOSFET (Metal Oxide) | TO-264-3 TO-264AA | Through Hole | 20 V | 550 V | 4.5 V | 10 V | 120 mOhm | -55 °C | 150 °C | 44 A | N-Channel | TO-264AA (IXFK) | 6400 pF | 500 W | 190 nC | |||
IXYS | MOSFET (Metal Oxide) | TO-264-3 TO-264AA | 330 nC | Through Hole | 20 V | 600 V | 4.5 V | 10 V | 130 mOhm | -55 °C | 150 °C | 44 A | N-Channel | TO-264AA (IXFK) | 560 W | 8900 pF |