CDBJSC8650-G

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Comchip Technology

DIODE SIL CARB 650V 8A TO220-2

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Comchip Technology

DIODE SIL CARB 650V 8A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	CDBJSC8650-G

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

DIODE SIL CARB 650V 8A TO220-2

Part	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
Comchip Technology CDBJSC8650-G	0 ns	8 A	Through Hole	175 ░C	-55 C	100 µA	SiC (Silicon Carbide) Schottky	650 V	No Recovery Time	TO-220-2	1.7 V	TO-220-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 8A Through Hole TO-220-2

Technical documentation and resources