DIODE SIL CARB 650V 8A TO220-2
| Part | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Package / Case | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology CDBJSC8650-G | 0 ns | 8 A | Through Hole | 175 ░C | -55 C | 100 µA | SiC (Silicon Carbide) Schottky | 650 V | No Recovery Time | TO-220-2 | 1.7 V | TO-220-2 |