IDW24G65C5BXKSA2

LTB

Infineon Technologies

DIODE SIL CARB 650V 12A TO247-3

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LTB

Infineon Technologies

DIODE SIL CARB 650V 12A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDW24G65C5BXKSA2

Capacitance @ Vr, F	360 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	190 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Technology	Current - Average Rectified (Io)	Supplier Device Package	Capacitance @ Vr, F
Infineon Technologies IDW24G65C5BXKSA2	Through Hole	0 ns	175 ░C	-55 C	190 µA	650 V	TO-247-3	No Recovery Time	SiC (Silicon Carbide) Schottky	12 A	PG-TO247-3	360 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 12A Through Hole PG-TO247-3

Technical documentation and resources