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DIODE SIL CARB 650V 12A TO247-3
| Part | Mounting Type | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Speed | Technology | Current - Average Rectified (Io) | Supplier Device Package | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Through Hole | 0 ns | 175 ░C | -55 C | 190 µA | 650 V | TO-247-3 | No Recovery Time | SiC (Silicon Carbide) Schottky | 12 A | PG-TO247-3 | 360 pF |