IMBG65R260M1HXTMA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 6 A, 650 V, 0.26 OHM, TO-263

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 6 A, 650 V, 0.26 OHM, TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	IMBG65R260M1HXTMA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	201 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	346 mOhm
Supplier Device Package	PG-TO263-7-12
Vgs (Max) [Max]	23 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	5.7 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	FET Type	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IMBG65R260M1HXTMA1	18 V	6 nC	5.7 V	346 mOhm	6 A	23 V	-5 V	PG-TO263-7-12	N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount	650 V	65 W	-55 °C	175 ░C	201 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 6A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12

Technical documentation and resources