Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 6 A, 650 V, 0.26 OHM, TO-263
| Part | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | Vgs (Max) [Min] | Supplier Device Package | FET Type | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 18 V | 6 nC | 5.7 V | 346 mOhm | 6 A | 23 V | -5 V | PG-TO263-7-12 | N-Channel | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | Surface Mount | 650 V | 65 W | -55 °C | 175 ░C | 201 pF |