Specification	TP65H035G4WS

Current - Continuous Drain (Id) (Tc)	46.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	22 nC
Input Capacitance (Ciss) (Max)	1500 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Power Dissipation (Max)	156 W
Rds On (Max)	41 mOhm
Technology	GaNFET (Cascode Gallium Nitride FET)
Vgs (Max)	20 V
Vgs(th) (Max)	4.8 V

TP65H035 Series

Part	Gate Charge (Max)	FET Type	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Mounting Type	Package / Case	Operating Temperature (Max)	Operating Temperature (Min)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package Name	Technology	Input Capacitance (Ciss) (Max)
Renesas Electronics Corporation TP65H035G4WS	22 nC	N-Channel	41 mOhm	46.5 A	4.8 V	Through Hole	TO-247-3	150 °C	-55 °C	650 V	156 W	10 V	20 V	TO-247-3	GaNFET (Cascode Gallium Nitride FET)	1500 pF
Renesas Electronics Corporation TP65H035G4WS	22 nC	N-Channel	41 mOhm	46.5 A	4.8 V	Through Hole	TO-247-3	150 °C	-55 °C	650 V	156 W	10 V	20 V	TO-247-3	GaNFET (Cascode Gallium Nitride FET)	1500 pF

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