TP65H035 Series
Manufacturer: Renesas Electronics Corporation
Beta
⌘K
GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 46 A, 0.041 OHM, 22 NC, TO-247, THROUGH HOLE
| Part | Gate Charge (Max) | FET Type | Rds On (Max) | Current - Continuous Drain (Id) (Tc) | Vgs(th) (Max) | Mounting Type | Package / Case | Operating Temperature (Max) | Operating Temperature (Min) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Package Name | Technology | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 22 nC | N-Channel | 41 mOhm | 46.5 A | 4.8 V | Through Hole | TO-247-3 | 150 °C | -55 °C | 650 V | 156 W | 10 V | 20 V | TO-247-3 | GaNFET (Cascode Gallium Nitride FET) | 1500 pF |
Renesas Electronics Corporation | 22 nC | N-Channel | 41 mOhm | 46.5 A | 4.8 V | Through Hole | TO-247-3 | 150 °C | -55 °C | 650 V | 156 W | 10 V | 20 V | TO-247-3 | GaNFET (Cascode Gallium Nitride FET) | 1500 pF |