IPU09N03LB G

Obsolete

Infineon Technologies

MOSFET N-CH 30V 50A TO251-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 30V 50A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPU09N03LB G

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	58 W
Rds On (Max) @ Id, Vgs	9.3 mOhm
Supplier Device Package	PG-TO251-3-21
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Technology	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPU09N03LA G	13 nC	2 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	4.5 V 10 V	20 V	Through Hole	PG-TO251-3-21	25 V	-55 °C	175 ░C	50 A	8.8 mOhm	63 W	1642 pF
Infineon Technologies IPU09N03LB G	13 nC	2 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	4.5 V 10 V	20 V	Through Hole	PG-TO251-3-21	30 V	-55 °C	175 ░C	50 A	9.3 mOhm	58 W		1600 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 50A (Tc) 58W (Tc) Through Hole PG-TO251-3-21

Technical documentation and resources