MOSFET N-CH 25V 50A TO251-3
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Technology | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 13 nC | 2 V | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | N-Channel | 4.5 V 10 V | 20 V | Through Hole | PG-TO251-3-21 | 25 V | -55 °C | 175 ░C | 50 A | 8.8 mOhm | 63 W | 1642 pF | |
Infineon Technologies | 13 nC | 2 V | MOSFET (Metal Oxide) | IPAK TO-251-3 Short Leads TO-251AA | N-Channel | 4.5 V 10 V | 20 V | Through Hole | PG-TO251-3-21 | 30 V | -55 °C | 175 ░C | 50 A | 9.3 mOhm | 58 W | 1600 pF |