BSP125H6327XTSA1

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Infineon Technologies

MOSFET, N-CH, 600V, 0.12A, SOT-223 ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 600V, 0.12A, SOT-223 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BSP125H6327XTSA1

Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds	150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	45 Ohm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies BSP125H6327XTSA1	45 Ohm	N-Channel	4.5 V 10 V	-55 °C	150 °C	20 V	600 V	Surface Mount	2.3 V	MOSFET (Metal Oxide)	PG-SOT223-4	150 pF	1.8 W	TO-261-4 TO-261AA	6.6 nC
Infineon Technologies BSP125H6433XTMA1		N-Channel	4.5 V 10 V	-55 °C	150 °C	20 V	600 V	Surface Mount	2.3 V	MOSFET (Metal Oxide)	PG-SOT223-4	150 pF	1.8 W	TO-261-4 TO-261AA	6.6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 120mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Technical documentation and resources