BSP125H6433XTMA1
ActiveSMALL SIGNAL N+N DUAL POWER MOSFET 60 V ; SO-8 DUAL PACKAGE; 150 MOHM;
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BSP125H6433XTMA1
ActiveSMALL SIGNAL N+N DUAL POWER MOSFET 60 V ; SO-8 DUAL PACKAGE; 150 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSP125H6433XTMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 1.8 W |
| Supplier Device Package | PG-SOT223-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSP125 Series
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Documents
Technical documentation and resources