SPN02N60S5

Obsolete

Infineon Technologies

MOSFET N-CH 600V 400MA SOT223-4

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Obsolete

Infineon Technologies

MOSFET N-CH 600V 400MA SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	SPN02N60S5

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.4 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5.5 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies SPN02N60C3	PG-SOT223-4	650 V	200 pF	3.9 V	20 V	400 mA	10 V	1.8 W	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	Surface Mount	TO-261-4 TO-261AA	13 nC	2.5 Ohm
Infineon Technologies SPN02N60S5	PG-SOT223-4	600 V	250 pF	5.5 V	20 V	400 mA	10 V	1.8 W	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	Surface Mount	TO-261-4 TO-261AA		3 Ohm	7.4 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Technical documentation and resources

No documents available