MOSFET N-CH 650V 400MA SOT223-4
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | FET Type | Mounting Type | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-SOT223-4 | 650 V | 200 pF | 3.9 V | 20 V | 400 mA | 10 V | 1.8 W | -55 °C | 150 °C | MOSFET (Metal Oxide) | N-Channel | Surface Mount | TO-261-4 TO-261AA | 13 nC | 2.5 Ohm | |
Infineon Technologies | PG-SOT223-4 | 600 V | 250 pF | 5.5 V | 20 V | 400 mA | 10 V | 1.8 W | -55 °C | 150 °C | MOSFET (Metal Oxide) | N-Channel | Surface Mount | TO-261-4 TO-261AA | 3 Ohm | 7.4 nC |