Specification	TSM900N06CP

Current - Continuous Drain (Id) (Tc)	11 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	9.3 nC
Input Capacitance (Ciss) (Max)	500 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252 (DPAK)
Power Dissipation (Max)	25 W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

TSM900 Series

Part	Rds On (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Package Name	Input Capacitance (Ciss) (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Power Dissipation (Max)	Package / Case	Vgs(th) (Max)	Mounting Type	Operating Temperature
Taiwan Semiconductor Corporation TSM900N10CP ROG	90 mOhm	100 V	15 A	TO-252 (DPAK)	1480 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel	9.3 nC	10 V	4.5 V	20 V	50 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	Surface Mount
Taiwan Semiconductor Corporation TSM900N06CP		60 V	11 A	TO-252 (DPAK)	500 pF	MOSFET (Metal Oxide)			N-Channel	9.3 nC	10 V	4.5 V	20 V	25 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	Surface Mount	150 °C
Taiwan Semiconductor Corporation TSM900N06CW RPG	90 mOhm	60 V	6 A	SOT-223	525 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel	11 nC	10 V	4.5 V	20 V	7.8 W	TO-261-4 TO-261AA	2.5 V	Surface Mount
Taiwan Semiconductor Corporation TSM900N10CH X0G	90 mOhm	100 V	15 A	TO-251 (IPAK)	1480 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel	9.3 nC	10 V	4.5 V	20 V	50 W	IPAK TO-251-3 Stub Leads	2.5 V	Through Hole
Taiwan Semiconductor Corporation TSM900N06CP ROG		60 V	11 A	TO-252 (DPAK)	500 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel	9.3 nC	10 V	4.5 V	20 V	25 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	Surface Mount