TSM900 Series

Catalog

TRANS MOSFET N-CH 100V 15A 3-PIN(2+TAB) DPAK T/R

Part	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]
Taiwan Semiconductor Corporation TSM900N10CP ROG	N-Channel	100 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1480 pF	TO-252 (DPAK)	Surface Mount	4.5 V 10 V	9.3 nC	2.5 V	50 W	90 mOhm	15 A	-55 °C	150 °C	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM900N06CP	N-Channel	60 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252 (DPAK)	Surface Mount	4.5 V 10 V	9.3 nC	2.5 V		90 mOhm	11 A			MOSFET (Metal Oxide)	25 W	500 pF	150 °C
Taiwan Semiconductor Corporation TSM900N06CW RPG	N-Channel	60 V	20 V	TO-261-4 TO-261AA	525 pF	SOT-223	Surface Mount	4.5 V 10 V		2.5 V	7.8 W	90 mOhm	6 A	-55 °C	150 °C	MOSFET (Metal Oxide)				11 nC
Taiwan Semiconductor Corporation TSM900N10CH X0G	N-Channel	100 V	20 V	TO-251-3 Stub Leads IPAK	1480 pF	TO-251 (IPAK)	Through Hole	4.5 V 10 V	9.3 nC	2.5 V	50 W	90 mOhm	15 A	-55 °C	150 °C	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM900N06CP ROG	N-Channel	60 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252 (DPAK)	Surface Mount	4.5 V 10 V	9.3 nC	2.5 V		90 mOhm	11 A	-55 °C	150 °C	MOSFET (Metal Oxide)	25 W	500 pF