STP110N8F7

Obsolete

STMicroelectronics

MOSFET N-CH 80V 80A TO220

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STP110N8F7

Obsolete

STMicroelectronics

MOSFET N-CH 80V 80A TO220

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP110N8F7

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46.8 nC
Input Capacitance (Ciss) (Max) @ Vds	3435 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

STP110N10F7 Series

N-channel 100 V, 5.1 mOhm typ., 110 A STripFET F7 Power MOSFET in TO-220 package

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Package / Case	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STP110N10F7	60 nC	20 V	5500 pF	110 A	10 V	N-Channel	Through Hole	-55 °C	175 ░C	7 mOhm	100 V	MOSFET (Metal Oxide)	TO-220-3	TO-220	150 W	4 V
STMicroelectronics STP110N55F6	120 nC	20 V		110 A	10 V	N-Channel	Through Hole	-55 °C	175 ░C	5.2 mOhm	55 V	MOSFET (Metal Oxide)	TO-220-3	TO-220	150 W	4 V	8350 pF
STMicroelectronics STP110N8F7		20 V	3435 pF		10 V	N-Channel	Through Hole	-55 °C	175 ░C	7.5 mOhm	80 V	MOSFET (Metal Oxide)	TO-220-3	TO-220	170 W	4.5 V		46.8 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

STP110N10F7 Series

These devices utilize the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

Documents

Technical documentation and resources