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STP110N10F7 - TO-220-3

STP110N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 5.1 MOHM TYP., 110 A STRIPFET F7 POWER MOSFET IN TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetAN4337+14
STP110N10F7 - TO-220-3

STP110N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 5.1 MOHM TYP., 110 A STRIPFET F7 POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheetAN4337+14

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP110N10F7
Current - Continuous Drain (Id) @ 25°C110 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]60 nC
Input Capacitance (Ciss) (Max) @ Vds5500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

STP110N10F7 Series

N-channel 100 V, 5.1 mOhm typ., 110 A STripFET F7 Power MOSFET in TO-220 package

PartGate Charge (Qg) (Max) @ Vgs [Max]Vgs (Max)Input Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)FET TypeMounting TypeOperating Temperature [Min]Operating Temperature [Max]Rds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)TechnologyPackage / CaseSupplier Device PackagePower Dissipation (Max)Vgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ Vds [Max]Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics
STP110N10F7
60 nC
20 V
5500 pF
110 A
10 V
N-Channel
Through Hole
-55 °C
175 ░C
7 mOhm
100 V
MOSFET (Metal Oxide)
TO-220-3
TO-220
150 W
4 V
STMicroelectronics
STP110N55F6
120 nC
20 V
110 A
10 V
N-Channel
Through Hole
-55 °C
175 ░C
5.2 mOhm
55 V
MOSFET (Metal Oxide)
TO-220-3
TO-220
150 W
4 V
8350 pF
STMicroelectronics
STP110N8F7
20 V
3435 pF
10 V
N-Channel
Through Hole
-55 °C
175 ░C
7.5 mOhm
80 V
MOSFET (Metal Oxide)
TO-220-3
TO-220
170 W
4.5 V
46.8 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1000$ 1.02
5000$ 1.00
DigikeyTube 1$ 2.80
10$ 1.82
100$ 1.27
500$ 1.03

Description

General part information

STP110N10F7 Series

These devices utilize the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.