Specification	PJD50N10AL-AU_L2_000A1

Current - Continuous Drain (Id) (Ta)	6.3 A
Current - Continuous Drain (Id) (Tc)	42 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	29 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1485 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252AA
Power Dissipation (Max)	83 W, 2 W
Qualification	AEC-Q101
Rds On (Max)	25 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

PJD50 Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Package / Case	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Vgs (Max)	Grade	Technology	Mounting Type	Package Name	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Qualification	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Rds On (Max)
Panjit International Inc. PJD50N04-AU_L2_000A1	10 V	4.5 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	1258 pF	40 V	2.5 V	20 V	Automotive	MOSFET (Metal Oxide)	Surface Mount	TO-252AA	9.6 A	50 A	AEC-Q101	22 nC	-55 °C	175 °C	2.4 W 64.9 W	9.5 mOhm
Panjit International Inc. PJD50N10AL-AU_L2_000A1	10 V	4.5 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	1485 pF	100 V	2.5 V	20 V	Automotive	MOSFET (Metal Oxide)	Surface Mount	TO-252AA	6.3 A	42 A	AEC-Q101	29 nC	-55 °C	150 °C	2 W 83 W	25 mOhm
Panjit International Inc. PJD50P04-AU_L2_000A1	10 V	4.5 V	P-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	2767 pF	40 V	2.5 V	20 V	Automotive	MOSFET (Metal Oxide)	Surface Mount	TO-252AA	9 A	50 A	AEC-Q101	23 nC	-55 °C	175 °C	2.4 W 75 W	12 mOhm
Panjit International Inc. PJD50N10AL_L2_00001	10 V	4.5 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	1485 pF	100 V	2.5 V	20 V		MOSFET (Metal Oxide)	Surface Mount	TO-252AA	6.3 A	42 A		29 nC	-55 °C	150 °C	2 W 83 W	25 mOhm

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