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PJD50N04-AU_L2_000A1

PJD50N04-AU_L2_000A1

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Panjit International Inc.

MOSFETS 40V N-CHANNEL ENHANCEMENT MODE MOSFET

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PJD50N04-AU_L2_000A1

PJD50N04-AU_L2_000A1

Active
Panjit International Inc.

MOSFETS 40V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

General part information

PJD50 Series

N-Channel 40 V 9.6A (Ta), 50A (Tc) 2.4W (Ta), 64.9W (Tc) Surface Mount TO-252AA

Technical Specifications

Parameters and characteristics for this part

SpecificationPJD50N04-AU_L2_000A1
Current - Continuous Drain (Id) (Ta)9.6 A
Current - Continuous Drain (Id) (Tc)50 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)22 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1258 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252AA
Power Dissipation (Max)64.9 W, 2.4 W
QualificationAEC-Q101
Rds On (Max)9.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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