IXTF02N450

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IXYS

MOSFET N-CH 4500V 200MA I4PAC

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IXYS

MOSFET N-CH 4500V 200MA I4PAC

Technical Specifications

Parameters and characteristics for this part

Specification	IXTF02N450

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	4500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.4 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5 (3 Leads)
Power Dissipation (Max)	78 W
Rds On (Max) @ Id, Vgs	750 Ohm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	6.5 V

Part	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXTF02N450	i4-Pac™-5 (3 Leads)	N-Channel	750 Ohm	10.4 nC	20 V	10 V	-55 °C	150 °C	Through Hole	MOSFET (Metal Oxide)	4500 V	6.5 V	ISOPLUS i4-PAC™	200 mA	78 W
IXYS IXTF03N400	i4-Pac™-5 (3 Leads)	N-Channel	300 Ohm		20 V	10 V	-55 °C	150 °C	Through Hole	MOSFET (Metal Oxide)	4000 V	4 V	ISOPLUS i4-PAC™	300 mA	70 W	16.3 nC	435 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 4500 V 200mA (Tc) 78W (Tc) Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

No documents available