MOSFET N-CH 4500V 200MA I4PAC
| Part | Package / Case | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | i4-Pac™-5 (3 Leads) | N-Channel | 750 Ohm | 10.4 nC | 20 V | 10 V | -55 °C | 150 °C | Through Hole | MOSFET (Metal Oxide) | 4500 V | 6.5 V | ISOPLUS i4-PAC™ | 200 mA | 78 W | ||
IXYS | i4-Pac™-5 (3 Leads) | N-Channel | 300 Ohm | 20 V | 10 V | -55 °C | 150 °C | Through Hole | MOSFET (Metal Oxide) | 4000 V | 4 V | ISOPLUS i4-PAC™ | 300 mA | 70 W | 16.3 nC | 435 pF |