STPSC4H065DI

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 4 A, 12.5 NC, TO-220AC

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STPSC4H065DI

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 4 A, 12.5 NC, TO-220AC

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Description Specifications Series Pricing CAD Documents

Description

General part information

STPSC4H065 Series

This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

This STPSC4H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC4H065DI

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-40 °C
Package / Case	TO-220AC, TO-220-2 Insulated
Package Name	TO-220AC ins
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.75 V

STPSC4H065 Series

650 V, 4 A High Surge Silicon Carbide Power Schottky Diode

Part	Voltage - Forward (Vf) (Max)	Current - Average Rectified (Io)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package / Case	Technology	Mounting Type	Current - Reverse Leakage	Voltage - DC Reverse (Vr) (Max)	Package Name	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Capacitance	Speed	Speed - Recovery Current	Reverse Recovery Time (trr)
STMicroelectronics STPSC4H065DI	1.75 V	4 A	175 °C	-40 °C	TO-220-2 Insulated TO-220AC	SiC (Silicon Carbide) Schottky	Through Hole	40 µA	650 V	TO-220AC ins	500 ns	200 mA
STMicroelectronics STPSC4H065D	1.75 V	4 A	175 °C	-40 °C	TO-220-2	SiC (Silicon Carbide) Schottky	Through Hole	40 µA	650 V	TO-220AC		500 mA	200 pF	No Recovery Time	500 mA 500 mA	0 ns
STMicroelectronics STPSC4H065B-TR	1.75 V	4 A	175 °C	-40 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	SiC (Silicon Carbide) Schottky	Surface Mount	40 µA	650 V	DPak		500 mA	200 pF	No Recovery Time	500 mA 500 mA	0 ns