STPSC4H065B-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 4 A, 12.5 NC, TO-252 (DPAK)
STPSC4H065B-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 4 A, 12.5 NC, TO-252 (DPAK)
Description
General part information
STPSC4H065 Series
This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
This STPSC4H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC4H065B-TR |
|---|---|
| Capacitance | 200 pF |
| Current - Average Rectified (Io) | 4 A |
| Current - Reverse Leakage | 40 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.75 V |
Pricing
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