IXTX1R4N450HV
ActiveDISCMOSFET NCH STD-VERYHIVOLT TO-247AD/ TUBE
IXTX1R4N450HV
ActiveDISCMOSFET NCH STD-VERYHIVOLT TO-247AD/ TUBE
Description
General part information
IXTX1 Series
The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTX1R4N450HV |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 1.4 A |
| Drain to Source Voltage (Vdss) | 4500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 88 nC |
| Input Capacitance (Ciss) (Max) | 3300 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 Variant |
| Package Name | TO-247PLUS-HV |
| Power Dissipation (Max) | 960 W |
| Rds On (Max) | 40 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources