Specification	ISL6613IB

Channel Type	Synchronous
Current - Peak Output (Sink)	2 A
Current - Peak Output (Source)	1.25 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	18 ns
Gate Channel	N-Channel
Gate Type	N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	36 V
Input Type	Non-Inverting
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	26 ns
Voltage - Supply (Maximum)	13.2 V
Voltage - Supply (Minimum)	10.8 VDC

ISL6613 Series

Part	Gate Type	Operating Temperature (Max)	Operating Temperature (Min)	Driven Configuration	Mounting Type	Input Type	Package Length	Package Name	Package Features	Package Width	Channel Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Number of Drivers	Gate Channel	Rise Time (Typ)	Fall Time (Typ)	High Side Voltage - Max (Bootstrap)	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)
Renesas Electronics Corporation ISL6613BECB	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	7 V
Renesas Electronics Corporation ISL6613BCB	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC		3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	7 V
Renesas Electronics Corporation ISL6613AEIB	MOSFET N-Channel MOSFET	125 °C	-40 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613ACBZ	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC		3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613ACB	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC		3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613BECBZ	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	7 V
Renesas Electronics Corporation ISL6613ECB	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613EIB	MOSFET N-Channel MOSFET	125 °C	-40 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613IB	MOSFET N-Channel MOSFET	125 °C	-40 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC		3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613BIBZ	MOSFET N-Channel MOSFET	125 °C	-40 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC		3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	7 V

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ISL6613IB | Datasheet