ISL6613 Series

Manufacturer: Renesas Electronics Corporation

Catalog

IC GATE DRVR HALF-BRIDGE 8SOIC

Part	Gate Type	Operating Temperature (Max)	Operating Temperature (Min)	Driven Configuration	Mounting Type	Input Type	Package Length	Package Name	Package Features	Package Width	Channel Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Number of Drivers	Gate Channel	Rise Time (Typ)	Fall Time (Typ)	High Side Voltage - Max (Bootstrap)	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)
Renesas Electronics Corporation ISL6613BECB	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	7 V
Renesas Electronics Corporation ISL6613BCB	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC		3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	7 V
Renesas Electronics Corporation ISL6613AEIB	MOSFET N-Channel MOSFET	125 °C	-40 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613ACBZ	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC		3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613ACB	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC		3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613BECBZ	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	7 V
Renesas Electronics Corporation ISL6613ECB	MOSFET N-Channel MOSFET	125 °C	0 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613EIB	MOSFET N-Channel MOSFET	125 °C	-40 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC 8-SOIC-EP	Exposed Pad	3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613IB	MOSFET N-Channel MOSFET	125 °C	-40 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC		3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	10.8 VDC
Renesas Electronics Corporation ISL6613BIBZ	MOSFET N-Channel MOSFET	125 °C	-40 °C	Half-Bridge	Surface Mount	Non-Inverting	0.154 in	8-SOIC		3.9 mm	Synchronous	2 A	1.25 A	2	N-Channel	26 ns	18 ns	36 V	13.2 V	7 V