PSMN8R7-80BS,118

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Nexperia USA Inc.

MOSFETS N-CHANNEL 100 V, 10 MOHM, STANDARD LEVEL MOSFET IN D2PAK

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PSMN8R7-80BS,118

Active

Nexperia USA Inc.

MOSFETS N-CHANNEL 100 V, 10 MOHM, STANDARD LEVEL MOSFET IN D2PAK

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN8R7 Series

Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN8R7-80BS,118

Current - Continuous Drain (Id) (Tc)	90 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	52 nC
Input Capacitance (Ciss) (Max)	3346 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	170 W
Rds On (Max)	8.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

PSMN8R7 Series

N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK

Part	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Vgs(th) (Max)	Package Name	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Current - Continuous Drain (Id) (Tj)
Nexperia USA Inc. PSMN8R7-80PS,127	80 V	Through Hole	TO-220-3	N-Channel	170 W	10 V	8.7 mOhm	4 V	TO-220AB	52 nC	90 A	20 V	3346 pF	-55 °C	175 °C	MOSFET (Metal Oxide)
Nexperia USA Inc. PSMN8R7-80BS,118	80 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	170 W	10 V	8.7 mOhm	4 V	D2PAK	52 nC	90 A	20 V	3346 pF	-55 °C	175 °C	MOSFET (Metal Oxide)
Nexperia USA Inc. PSMN8R7-100YSFX																	90 A