IAUCN04S6N013TATMA1
ActiveIAUCN04S6N013T IS AN AUTOMOTIVE MOSFET OFFERING INFINEON'S NEW TOP SIDE COOLING PACKAGE SSO10T TSC WITH OPTIMOS 6 TECHNOLOGY FOR HIGH POWER DENSITY AND OPTIMIZED SYSTEM COSTS.
Deep-Dive with AI
Search across all available documentation for this part.
IAUCN04S6N013TATMA1
ActiveIAUCN04S6N013T IS AN AUTOMOTIVE MOSFET OFFERING INFINEON'S NEW TOP SIDE COOLING PACKAGE SSO10T TSC WITH OPTIMOS 6 TECHNOLOGY FOR HIGH POWER DENSITY AND OPTIMIZED SYSTEM COSTS.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUCN04S6N013TATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 230 A |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 69 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 4810 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) [Max] | 133 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 1.32 mOhm |
| Supplier Device Package | PG-LHDSO-10-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IAUCN04 Series
This innovative TSC package enables best cooling, high power density optimized system costs An initial portfolio offering starts with 4 products in OptiMOSTM6 40V and is extended soon.RDS (on) max ranges from 1.73 mΩ down to 0.75 mΩ SSO10T TSC package is JEDEC listed for open market use and wide 2nd source compatibility.
Documents
Technical documentation and resources
No documents available