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MOSFET_(20V 40V)
| Part | FET Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Vgs (Max) | Grade | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | ||||||||||||||||
Infineon Technologies | N-Channel | PG-LHDSO-10-1 | -55 °C | 175 ░C | 4810 pF | 133 W | 1.32 mOhm | 20 V | Automotive | 3 V | 230 A | 69 nC | 40 V | Surface Mount | MOSFET (Metal Oxide) | AEC-Q101 |
Infineon Technologies | ||||||||||||||||
Infineon Technologies |