DMN3404LQ-7

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3404LQ-7

Current - Continuous Drain (Id) @ 25°C	5.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 3 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	498 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	720 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	28 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

N-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Grade	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMN3404LQ-7	5.8 A	3 V 10 V	16 nC	AEC-Q101	SC-59 SOT-23-3 TO-236-3	30 V	N-Channel	Automotive	SOT-23-3	2 V	20 V	-55 °C	150 °C	Surface Mount	720 mW	MOSFET (Metal Oxide)	498 pF	28 mOhm

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General part information

N-Channel Enhancement Mode MOSFET

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