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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Qualification | Package / Case | Drain to Source Voltage (Vdss) | FET Type | Grade | Supplier Device Package | Vgs(th) (Max) @ Id | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Power Dissipation (Max) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 5.8 A | 3 V 10 V | 16 nC | AEC-Q101 | SC-59 SOT-23-3 TO-236-3 | 30 V | N-Channel | Automotive | SOT-23-3 | 2 V | 20 V | -55 °C | 150 °C | Surface Mount | 720 mW | MOSFET (Metal Oxide) | 498 pF | 28 mOhm |