SSM6N37FU,LF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A US6

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A US6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N37FU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Input Capacitance (Ciss) (Max) @ Vds	12 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	2.2 Ohm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Configuration	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Power - Max [Max]	FET Feature	FET Feature	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Technology	Operating Temperature
Toshiba Semiconductor and Storage SSM6N37FU,LF	2 N-Channel (Dual)	250 mA	US6	6-TSSOP SC-88 SOT-363	300 mW	Logic Level Gate	1.5 V	20 V	12 pF	2.2 Ohm	1 V	Surface Mount	MOSFET (Metal Oxide)	150 °C

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General part information

Mosfet Array 20V 250mA (Ta) 300mW Surface Mount US6

Technical documentation and resources