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MOSFET 2N-CH 20V 0.25A US6
| Part | Configuration | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case | Power - Max [Max] | FET Feature | FET Feature | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Mounting Type | Technology | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2 N-Channel (Dual) | 250 mA | US6 | 6-TSSOP SC-88 SOT-363 | 300 mW | Logic Level Gate | 1.5 V | 20 V | 12 pF | 2.2 Ohm | 1 V | Surface Mount | MOSFET (Metal Oxide) | 150 °C |