STP24NF10
ActiveN-CHANNEL 100V - 0.055OHM - 26A - TO-220 LOOHM GATE CHARGE STRIPFET(TM) II POWER MOSFET
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STP24NF10
ActiveN-CHANNEL 100V - 0.055OHM - 26A - TO-220 LOOHM GATE CHARGE STRIPFET(TM) II POWER MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | STP24NF10 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 26 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 41 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 85 W |
| Rds On (Max) @ Id, Vgs [Max] | 60 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP24N60M6 Series
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Documents
Technical documentation and resources