STP24N60M6 Series

N-Channel 100V - 0.055Ohm - 26A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET

Catalog

N-Channel 100V - 0.055Ohm - 26A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET

Part	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
STMicroelectronics STP24NF10	85 W	10 V	Through Hole	MOSFET (Metal Oxide)	N-Channel	100 V	26 A	-55 °C	175 ░C	20 V	60 mOhm	41 nC	TO-220-3	870 pF	TO-220	4 V
STMicroelectronics STP24N60M6		10 V	Through Hole	MOSFET (Metal Oxide)	N-Channel	600 V	17 A	-55 °C	150 °C	25 V			TO-220-3		TO-220	4.75 V	23 nC	190 mOhm	130 W

Catalog

N-Channel 100V - 0.055Ohm - 26A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.