SSM6J207FE,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 1.4A ES6

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 1.4A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J207FE,LF

Current - Continuous Drain (Id) @ 25°C	1.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	137 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	251 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Technology	FET Type	Power Dissipation (Max) [Max]	Vgs (Max)	Package / Case
Toshiba Semiconductor and Storage SSM6J207FE,LF	4 V	10 V	30 V	ES6	2.6 V	1.4 A	Surface Mount	251 mOhm	137 pF	150 °C	MOSFET (Metal Oxide)	P-Channel	500 mW	20 V	SOT-563 SOT-666

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General part information

P-Channel 30 V 1.4A (Ta) 500mW (Ta) Surface Mount ES6

Technical documentation and resources