MOSFET P-CH 30V 1.4A ES6
| Part | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Technology | FET Type | Power Dissipation (Max) [Max] | Vgs (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 4 V | 10 V | 30 V | ES6 | 2.6 V | 1.4 A | Surface Mount | 251 mOhm | 137 pF | 150 °C | MOSFET (Metal Oxide) | P-Channel | 500 mW | 20 V | SOT-563 SOT-666 |