SCS215KGC17
ActiveRohm Semiconductor
SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 15 A, 51 NC, TO-220ACG
SCS215KGC17
ActiveRohm Semiconductor
SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 15 A, 51 NC, TO-220ACG
Description
General part information
SCS215KG Series
Switching loss reduced, enabling high-speed switching . (2-pin package)
Technical Specifications
Parameters and characteristics for this part
| Specification | SCS215KGC17 |
|---|---|
| Capacitance | 790 pF |
| Current - Average Rectified (Io) | 15 A |
| Current - Reverse Leakage | 300 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220ACFP |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.6 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
About Export Administration Regulations (EAR)
How to Create Symbols for PSpice Models
Basics of Thermal Resistance and Heat Dissipation
Method for Monitoring Switching Waveform
Anti-Whisker formation
4 Steps for Successful Thermal Designing of Power Devices
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
How to Use Thermal Models
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Condition of Soldering
Calculation of Power Dissipation in Switching Circuit
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Compliance of the ELV directive
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules
Importance of Probe Calibration When Measuring Power: Deskew
θ<sub>JC</sub> and Ψ<sub>JT</sub>
ESD Data
PCB Layout Thermal Design Guide
How to measure the oscillation occurs between parallel-connected devices
How to Use LTspice® Models: Tips for Improving Convergence
Part Explanation
What is a Thermal Model? (SiC Power Device)
Precautions When Measuring the Rear of the Package with a Thermocouple
Judgment Criteria of Thermal Evaluation
Two-Resistor Model for Thermal Simulation
Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs
Notes for Calculating Power Consumption:Static Operation
About Flammability of Materials
Diode Types and Applications
How to Suppress the Parallel Drive Oscillation in SiC Modules
What Is Thermal Design
Measurement Method and Usage of Thermal Resistance RthJC
Oscillation countermeasures for MOSFETs in parallel
Precautions for Thermal Resistance of Insulation Sheet
Impedance Characteristics of Bypass Capacitor
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Application Note for SiC Power Devices and Modules
Notes for Temperature Measurement Using Thermocouples
How to Use LTspice® Models
Notes for Temperature Measurement Using Forward Voltage of PN Junction