Catalog
1200V, 15A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (2-pin package)
Beta
⌘K
1200V, 15A, THD, Silicon-carbide (SiC) SBD
1200V, 15A, THD, Silicon-carbide (SiC) SBD
| Part | Package / Case | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) | Package Name | Technology | Capacitance | Mounting Type | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Operating Temperature - Junction | Current - Reverse Leakage |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | TO-220-2 | 15 A | 0 ns | 1200 V | 1.6 V | TO-220ACFP | SiC (Silicon Carbide) Schottky | 790 pF | Through Hole | 500 mA | No Recovery Time | 500 mA 500 mA | 175 °C | 300 µA |