DMP1009UFDFQ-13

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Diodes Inc

12V P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

12V P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP1009UFDFQ-13

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	44 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max) [Max]	2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	U-DFN2020-6 (Type F)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

12V P-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Qualification	Gate Charge (Qg) (Max) @ Vgs	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMP1009UFDFQ-7	8 V	2 W	1 V	1.8 V 4.5 V	11 A	MOSFET (Metal Oxide)	6-UDFN Exposed Pad	11 mOhm	AEC-Q101	44 nC	P-Channel	Surface Mount	12 V	U-DFN2020-6 (Type F)	-55 °C	150 °C	Automotive	1860 pF
Diodes Inc DMP1009UFDFQ-13	8 V	2 W	1 V	1.8 V 4.5 V	11 A	MOSFET (Metal Oxide)	6-UDFN Exposed Pad	11 mOhm	AEC-Q101	44 nC	P-Channel	Surface Mount	12 V	U-DFN2020-6 (Type F)	-55 °C	150 °C	Automotive	1860 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.