DMP1009UFDFQ Series

12V P-Channel Enhancement Mode MOSFET

Catalog

12V P-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Qualification	Gate Charge (Qg) (Max) @ Vgs	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMP1009UFDFQ-7	8 V	2 W	1 V	1.8 V 4.5 V	11 A	MOSFET (Metal Oxide)	6-UDFN Exposed Pad	11 mOhm	AEC-Q101	44 nC	P-Channel	Surface Mount	12 V	U-DFN2020-6 (Type F)	-55 °C	150 °C	Automotive	1860 pF
Diodes Inc DMP1009UFDFQ-13	8 V	2 W	1 V	1.8 V 4.5 V	11 A	MOSFET (Metal Oxide)	6-UDFN Exposed Pad	11 mOhm	AEC-Q101	44 nC	P-Channel	Surface Mount	12 V	U-DFN2020-6 (Type F)	-55 °C	150 °C	Automotive	1860 pF

12V P-Channel Enhancement Mode MOSFET

• 0.6mm Profile – Ideal for Low Profile Applications

• PCB Footprint of 4mm2

• Low On-Resistance

• Fast Switching Speed

• 100% Unclamped Inductive Switching (Test in Production) – Ensures More Reliability

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Capable (Note 4)

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.