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UCC23514MDWV

Active
Texas Instruments

5KVRMS 4A/5A, SINGLE-CHANNEL OPTO-COMPATIBLE ISOLATED GATE DRIVER W/ CLAMP & SPLIT OUTPUT OPTIONS

UCC23514MDWV - https://ti.com/content/dam/ticom/images/products/package/d/dwv0008a.png

UCC23514MDWV

Active
Texas Instruments

5KVRMS 4A/5A, SINGLE-CHANNEL OPTO-COMPATIBLE ISOLATED GATE DRIVER W/ CLAMP & SPLIT OUTPUT OPTIONS

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationUCC23514MDWVUCC23514 Series
Approval AgencyUL, CQC, VDEUL, CQC, VDE
Common Mode Transient Immunity (Min) [Min]150 kV/µs150 kV/µs
Current - DC Forward (If) (Max)25 mA16 - 25 mA
Current - Output High, Low3.5 A, 3 A3 - 3.5 A
Current - Peak Output5.3 A, 4.5 A4.5 - 5.3 A
Mounting TypeSurface MountSurface Mount
Number of Channels [custom]11
Operating Temperature [Max]125 °C125 °C
Operating Temperature [Min]-40 °C-40 °C
Package / Case8-SOIC8-SOIC
Package / Case-3.9 mm
Propagation Delay tpLH / tpHL (Max)70 ns, 70 ns70 ns
Pulse Width Distortion (Max) [Max]35 ns35 ns
Rise / Fall Time (Typ)25 ns, 28 ns25 - 28 ns
Supplier Device Package8-SOIC8-SOIC
TechnologyCapacitive CouplingCapacitive Coupling
Voltage - Forward (Vf) (Typ)2.1 V2.1 V
Voltage - Output Supply [Max]33 V33 V
Voltage - Output Supply [Min]14 V14 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

UCC23514 Series

5kVrms 4A/5A, single-channel opto-compatible isolated gate driver w/ clamp & split output options

PartRise / Fall Time (Typ)Mounting TypeCurrent - Peak OutputNumber of Channels [custom]Pulse Width Distortion (Max) [Max]Approval AgencyVoltage - Forward (Vf) (Typ)Common Mode Transient Immunity (Min) [Min]Current - DC Forward (If) (Max)Supplier Device PackagePackage / CaseTechnologyCurrent - Output High, LowPropagation Delay tpLH / tpHL (Max)Operating Temperature [Max]Operating Temperature [Min]Voltage - Output Supply [Min]Voltage - Output Supply [Max]Package / Case
Texas Instruments
UCC23514EDWV
The UCC23514 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.0-kVRMSreinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23514 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in an 8-Pin surface mount 7.5 mm x 5.85 mm (typical) SOIC package, with creepage and clearance ≥ 8.5 mm, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V. UCC23514’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional opto-couplers. The UCC23514V option provides the gate drive output on a single terminal. For applications requiring split gate drive output, the UCC23514S version provides two separate output pins, OUTH and OUTL. The UCC23514E version suits applications requiring an UVLO referenced to a separate COM pin, which facilitates bipolar gate drive supply applications. The UCC23514M option connects the gate of the transistor to an internal clamp to prevent false turn-on caused by Miller current. The UCC23514 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.0-kVRMSreinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23514 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in an 8-Pin surface mount 7.5 mm x 5.85 mm (typical) SOIC package, with creepage and clearance ≥ 8.5 mm, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V. UCC23514’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional opto-couplers. The UCC23514V option provides the gate drive output on a single terminal. For applications requiring split gate drive output, the UCC23514S version provides two separate output pins, OUTH and OUTL. The UCC23514E version suits applications requiring an UVLO referenced to a separate COM pin, which facilitates bipolar gate drive supply applications. The UCC23514M option connects the gate of the transistor to an internal clamp to prevent false turn-on caused by Miller current.
25 ns, 28 ns
Surface Mount
4.5 A, 5.3 A
1
35 ns
CQC, UL, VDE
2.1 V
150 kV/µs
25 mA
8-SOIC
8-SOIC
Capacitive Coupling
3 A, 3.5 A
70 ns, 70 ns
125 °C
-40 °C
14 V
33 V
Texas Instruments
UCC23514MDWVR
The UCC23514 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.0-kVRMSreinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23514 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in an 8-Pin surface mount 7.5 mm x 5.85 mm (typical) SOIC package, with creepage and clearance ≥ 8.5 mm, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V. UCC23514’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional opto-couplers. The UCC23514V option provides the gate drive output on a single terminal. For applications requiring split gate drive output, the UCC23514S version provides two separate output pins, OUTH and OUTL. The UCC23514E version suits applications requiring an UVLO referenced to a separate COM pin, which facilitates bipolar gate drive supply applications. The UCC23514M option connects the gate of the transistor to an internal clamp to prevent false turn-on caused by Miller current. The UCC23514 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.0-kVRMSreinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23514 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in an 8-Pin surface mount 7.5 mm x 5.85 mm (typical) SOIC package, with creepage and clearance ≥ 8.5 mm, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V. UCC23514’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional opto-couplers. The UCC23514V option provides the gate drive output on a single terminal. For applications requiring split gate drive output, the UCC23514S version provides two separate output pins, OUTH and OUTL. The UCC23514E version suits applications requiring an UVLO referenced to a separate COM pin, which facilitates bipolar gate drive supply applications. The UCC23514M option connects the gate of the transistor to an internal clamp to prevent false turn-on caused by Miller current.
25 ns, 28 ns
Surface Mount
4.5 A
1
35 ns
CQC, UL, VDE
2.1 V
150 kV/µs
16 mA
8-SOIC
8-SOIC
Capacitive Coupling
3 A, 3.5 A
70 ns, 70 ns
125 °C
-40 °C
14 V
33 V
3.9 mm
Texas Instruments
UCC23514MDWV
The UCC23514 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.0-kVRMSreinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23514 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in an 8-Pin surface mount 7.5 mm x 5.85 mm (typical) SOIC package, with creepage and clearance ≥ 8.5 mm, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V. UCC23514’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional opto-couplers. The UCC23514V option provides the gate drive output on a single terminal. For applications requiring split gate drive output, the UCC23514S version provides two separate output pins, OUTH and OUTL. The UCC23514E version suits applications requiring an UVLO referenced to a separate COM pin, which facilitates bipolar gate drive supply applications. The UCC23514M option connects the gate of the transistor to an internal clamp to prevent false turn-on caused by Miller current. The UCC23514 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.0-kVRMSreinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23514 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in an 8-Pin surface mount 7.5 mm x 5.85 mm (typical) SOIC package, with creepage and clearance ≥ 8.5 mm, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V. UCC23514’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional opto-couplers. The UCC23514V option provides the gate drive output on a single terminal. For applications requiring split gate drive output, the UCC23514S version provides two separate output pins, OUTH and OUTL. The UCC23514E version suits applications requiring an UVLO referenced to a separate COM pin, which facilitates bipolar gate drive supply applications. The UCC23514M option connects the gate of the transistor to an internal clamp to prevent false turn-on caused by Miller current.
25 ns, 28 ns
Surface Mount
4.5 A, 5.3 A
1
35 ns
CQC, UL, VDE
2.1 V
150 kV/µs
25 mA
8-SOIC
8-SOIC
Capacitive Coupling
3 A, 3.5 A
70 ns, 70 ns
125 °C
-40 °C
14 V
33 V
Texas Instruments
UCC23514SDWV
The UCC23514 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.0-kVRMSreinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23514 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in an 8-Pin surface mount 7.5 mm x 5.85 mm (typical) SOIC package, with creepage and clearance ≥ 8.5 mm, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V. UCC23514’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional opto-couplers. The UCC23514V option provides the gate drive output on a single terminal. For applications requiring split gate drive output, the UCC23514S version provides two separate output pins, OUTH and OUTL. The UCC23514E version suits applications requiring an UVLO referenced to a separate COM pin, which facilitates bipolar gate drive supply applications. The UCC23514M option connects the gate of the transistor to an internal clamp to prevent false turn-on caused by Miller current. The UCC23514 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.0-kVRMSreinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23514 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in an 8-Pin surface mount 7.5 mm x 5.85 mm (typical) SOIC package, with creepage and clearance ≥ 8.5 mm, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V. UCC23514’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional opto-couplers. The UCC23514V option provides the gate drive output on a single terminal. For applications requiring split gate drive output, the UCC23514S version provides two separate output pins, OUTH and OUTL. The UCC23514E version suits applications requiring an UVLO referenced to a separate COM pin, which facilitates bipolar gate drive supply applications. The UCC23514M option connects the gate of the transistor to an internal clamp to prevent false turn-on caused by Miller current.
25 ns, 28 ns
Surface Mount
4.5 A, 5.3 A
1
35 ns
CQC, UL, VDE
2.1 V
150 kV/µs
25 mA
8-SOIC
8-SOIC
Capacitive Coupling
3 A, 3.5 A
70 ns, 70 ns
125 °C
-40 °C
14 V
33 V
Texas Instruments
UCC23514SDWVR
The UCC23514 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.0-kVRMSreinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23514 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in an 8-Pin surface mount 7.5 mm x 5.85 mm (typical) SOIC package, with creepage and clearance ≥ 8.5 mm, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V. UCC23514’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional opto-couplers. The UCC23514V option provides the gate drive output on a single terminal. For applications requiring split gate drive output, the UCC23514S version provides two separate output pins, OUTH and OUTL. The UCC23514E version suits applications requiring an UVLO referenced to a separate COM pin, which facilitates bipolar gate drive supply applications. The UCC23514M option connects the gate of the transistor to an internal clamp to prevent false turn-on caused by Miller current. The UCC23514 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.0-kVRMSreinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23514 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in an 8-Pin surface mount 7.5 mm x 5.85 mm (typical) SOIC package, with creepage and clearance ≥ 8.5 mm, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V. UCC23514’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional opto-couplers. The UCC23514V option provides the gate drive output on a single terminal. For applications requiring split gate drive output, the UCC23514S version provides two separate output pins, OUTH and OUTL. The UCC23514E version suits applications requiring an UVLO referenced to a separate COM pin, which facilitates bipolar gate drive supply applications. The UCC23514M option connects the gate of the transistor to an internal clamp to prevent false turn-on caused by Miller current.
25 ns, 28 ns
Surface Mount
4.5 A
1
35 ns
CQC, UL, VDE
2.1 V
150 kV/µs
16 mA
8-SOIC
8-SOIC
Capacitive Coupling
3 A, 3.5 A
70 ns, 70 ns
125 °C
-40 °C
14 V
33 V
3.9 mm

Description

General part information

UCC23514 Series

The UCC23514 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 5.0-kVRMSreinforced isolation rating. The high supply voltage range of 33-V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23514 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion.

Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs. It is offered in an 8-Pin surface mount 7.5 mm x 5.85 mm (typical) SOIC package, with creepage and clearance ≥ 8.5 mm, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V. UCC23514’s high performance and reliability makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional opto-couplers.

The UCC23514V option provides the gate drive output on a single terminal. For applications requiring split gate drive output, the UCC23514S version provides two separate output pins, OUTH and OUTL. The UCC23514E version suits applications requiring an UVLO referenced to a separate COM pin, which facilitates bipolar gate drive supply applications. The UCC23514M option connects the gate of the transistor to an internal clamp to prevent false turn-on caused by Miller current.