DMP6023LFGQ-13
ActivePOWER MOSFET, P CHANNEL, 60 V, 7.7 A, 0.025 OHM, POWERDI3333, SURFACE MOUNT
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DMP6023LFGQ-13
ActivePOWER MOSFET, P CHANNEL, 60 V, 7.7 A, 0.025 OHM, POWERDI3333, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMP6023LFGQ-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.7 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 53.1 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 2569 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 155 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 1 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | POWERDI3333-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
DMP6023LFGQ Series
60V P-Channel Enhancement Mode MOSFET
| Part | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case [y] | Package / Case [x] | FET Type | Mounting Type | Power Dissipation (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Qualification | Grade | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 60 V | 4.5 V 10 V | 20 V | 6.6 A | 3 V | 2569 pF | 8-SOIC | 3.9 mm | 0.154 in | P-Channel | Surface Mount | 1.2 W | MOSFET (Metal Oxide) | 53.1 nC | 25 mOhm | 8-SO | -55 °C | 150 °C | |||
Diodes Inc | 60 V | 4.5 V 10 V | 20 V | 7.7 A | 3 V | 2569 pF | 8-PowerVDFN | P-Channel | Surface Mount | 1 W | MOSFET (Metal Oxide) | 53.1 nC | 25 mOhm | POWERDI3333-8 | -55 °C | 150 °C | |||||
Diodes Inc | 60 V | 4.5 V 10 V | 20 V | 7.7 A | 3 V | 2569 pF | 8-PowerVDFN | P-Channel | Surface Mount | 1 W | MOSFET (Metal Oxide) | 53.1 nC | 25 mOhm | POWERDI3333-8 | -55 °C | 155 °C | AEC-Q101 | Automotive | |||
Diodes Inc | 60 V | 4.5 V 10 V | 20 V | 7.7 A | 3 V | 2569 pF | 8-PowerVDFN | P-Channel | Surface Mount | 1 W | MOSFET (Metal Oxide) | 53.1 nC | 25 mOhm | POWERDI3333-8 | -55 °C | 150 °C | |||||
Diodes Inc | 60 V | 4.5 V 10 V | 20 V | 7.7 A | 3 V | 2569 pF | 8-PowerVDFN | P-Channel | Surface Mount | 1 W | MOSFET (Metal Oxide) | 53.1 nC | 25 mOhm | POWERDI3333-8 | -55 °C | 155 °C | AEC-Q101 | Automotive | |||
Diodes Inc | 60 V | 4.5 V 10 V | 20 V | 7 A 18.2 A | 3 V | 2569 pF | TO-261-4 TO-261AA | P-Channel | Surface Mount | MOSFET (Metal Oxide) | 53.1 nC | SOT-223-3 | -55 °C | 150 °C | 2 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.77 | |
| 10 | $ 0.67 | |||
| 100 | $ 0.46 | |||
| 500 | $ 0.39 | |||
| 1000 | $ 0.33 | |||
| Digi-Reel® | 1 | $ 0.77 | ||
| 10 | $ 0.67 | |||
| 100 | $ 0.46 | |||
| 500 | $ 0.39 | |||
| 1000 | $ 0.33 | |||
| Tape & Reel (TR) | 3000 | $ 0.30 | ||
| 6000 | $ 0.28 | |||
| 9000 | $ 0.27 | |||
| 15000 | $ 0.26 | |||
Description
General part information
DMP6023LFGQ Series
The device contains two Op Amps and a 2.5V precision shunt voltage reference. Op Amp 1 is designed for voltage control with its non-inverting input internally connected to the output of the shunt regulator. Op Amp 2 is for current control with both inputs uncommitted. The IC offers the power converter designer a control solution that features increased precision with a corresponding reduction in system complexity and cost. AP1234 has more stringent reference voltage tolerance and offset.
Documents
Technical documentation and resources