DMP6023LFG-13

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Diodes Inc

60V P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP6023LFG-13

Active

Diodes Inc

60V P-CHANNEL ENHANCEMENT MODE MOSFET

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DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMP6023LFG-13

Current - Continuous Drain (Id) @ 25°C	7.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	53.1 nC
Input Capacitance (Ciss) (Max) @ Vds	2569 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

DMP6023LFGQ Series

60V P-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Mounting Type	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Grade	Power Dissipation (Max) [Max]
Diodes Inc DMP6023LSS-13	60 V	4.5 V 10 V	20 V	6.6 A	3 V	2569 pF	8-SOIC	3.9 mm	0.154 in	P-Channel	Surface Mount	1.2 W	MOSFET (Metal Oxide)	53.1 nC	25 mOhm	8-SO	-55 °C	150 °C
Diodes Inc DMP6023LFG-7	60 V	4.5 V 10 V	20 V	7.7 A	3 V	2569 pF	8-PowerVDFN			P-Channel	Surface Mount	1 W	MOSFET (Metal Oxide)	53.1 nC	25 mOhm	POWERDI3333-8	-55 °C	150 °C
Diodes Inc DMP6023LFGQ-13	60 V	4.5 V 10 V	20 V	7.7 A	3 V	2569 pF	8-PowerVDFN			P-Channel	Surface Mount	1 W	MOSFET (Metal Oxide)	53.1 nC	25 mOhm	POWERDI3333-8	-55 °C	155 °C	AEC-Q101	Automotive
Diodes Inc DMP6023LFG-13	60 V	4.5 V 10 V	20 V	7.7 A	3 V	2569 pF	8-PowerVDFN			P-Channel	Surface Mount	1 W	MOSFET (Metal Oxide)	53.1 nC	25 mOhm	POWERDI3333-8	-55 °C	150 °C
Diodes Inc DMP6023LFGQ-7	60 V	4.5 V 10 V	20 V	7.7 A	3 V	2569 pF	8-PowerVDFN			P-Channel	Surface Mount	1 W	MOSFET (Metal Oxide)	53.1 nC	25 mOhm	POWERDI3333-8	-55 °C	155 °C	AEC-Q101	Automotive
Diodes Inc DMP6023LE-13	60 V	4.5 V 10 V	20 V	7 A 18.2 A	3 V	2569 pF	TO-261-4 TO-261AA			P-Channel	Surface Mount		MOSFET (Metal Oxide)	53.1 nC		SOT-223-3	-55 °C	150 °C			2 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.89
		10	$ 0.77
		100	$ 0.53
		500	$ 0.44
		1000	$ 0.38
	Digi-Reel®	1	$ 0.89
		10	$ 0.77
		100	$ 0.53
		500	$ 0.44
		1000	$ 0.38
	Tape & Reel (TR)	3000	$ 0.34
		6000	$ 0.31
		9000	$ 0.30

Description

General part information

DMP6023LFGQ Series

The device contains two Op Amps and a 2.5V precision shunt voltage reference. Op Amp 1 is designed for voltage control with its non-inverting input internally connected to the output of the shunt regulator. Op Amp 2 is for current control with both inputs uncommitted. The IC offers the power converter designer a control solution that features increased precision with a corresponding reduction in system complexity and cost. AP1234 has more stringent reference voltage tolerance and offset.